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| SMD Type Transistors IC N-channel enhancement mode MOSFET 2SK3731 TO-263 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resistance, low Qg High avalanche resistance + .1 1 .2 7 -00.1 + .2 8 .7 -00.2 For high-speed switching +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Power dissipation Ta = 25 Channel temperature Storage temperature *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25 Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 230 30 20 80 668 50 1.4 150 -55 to +150 Unit V V A A mJ W 5 .6 0 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type 2SK3731 Electrical Characteristics Ta = 25 Parameter Drain-source surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff current Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance Short-circuit output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode foward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Symbol VDSS Vth IDSS IGSS RDS(on) |YfS| Ciss Coss Crss td(on) Tr td(off) tf VDSF trr Qrr Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VDD = 100 V, ID = 10 A,VGS = 10 V IDR = 20 A, VGS = 0 L = 230 iH, VDD = 100 V IDR = 10 A, di/dt = 100 A/is VDD 100 V, ID = 10 A VDS = 25 V, VGS = 0, f = 1 MHz Testconditons ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 184 V, VGS = 0 VGS = 30 V, VDS = 0 Min 230 2.0 Transistors IC Typ Max Unit V 4.0 10 1 65 82 V iA iA mU S pF pF pF ns ns ns ns VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A 7 14 360 394 49 31 27 214 47 ?1.5 142 668 43 6.6 16 2.5 89.2 RL = 10U, VGS = 10 V V ns nC nC nC nC /W /W 2 www.kexin.com.cn |
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